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1

High temperature Schottky diodes with boron-doped homoepitaxial diamond base

G.Sh. Gildenblat, S.A. Grot, C.W. Hatfield, C.R. Wronski, A.R. Badzian, T. Badzian, R. Messier

Journal:

Materials Research Bulletin

Year:

1990

Language:

english

File:

PDF, 234 KB

english, 1990

2

Electrical Properties of Homoepitaxial Diamond Films

Gildenblat, G. Sh., Grot, S. A., Hatfield, C. W., Wronski, C. R., Badzian, A. R., Badzian, T., Messier, R.

Journal:

MRS Proceedings

Year:

1989

Language:

english

File:

PDF, 1010 KB

english, 1989

3

Split C-V measurements of low temperature MOSFET inversion layer mobility

G.Sh. Gildenblat, C.-L. Huang, N.D. Arora

Journal:

Year:

1989

Language:

english

File:

PDF, 365 KB

english, 1989

4

Criteria for estimating the impact of series resistance on MOSFET performance

G.Sh. Gildenblat, S.S. Cohen

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 270 KB

english, 1988

5

Theory of space-charge-limited currents in materials with an exponential energy distribution of capture centers

Gennady Sh. Gildenblat, S. Nakagawa, Vladimir Bolkhovsky

Journal:

Solid-State Electronics

Year:

1989

Language:

english

File:

PDF, 628 KB

english, 1989

6

An accurate engineering model of an n-channel MOSFET for 60–300 K temperature range

C.-L. Huang, G.Sh. Gildenblat

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 749 KB

english, 1990

7

Analytic d.c. characteristic of space-charge-limited currents with field-dependent mobility

G.Sh. Gildenblat

Journal:

Solid-State Electronics

Year:

1992

Language:

english

File:

PDF, 75 KB

english, 1992

8

Correction factor in the split C–V method for mobility measurements

C.-L. Huang, G.Sh. Gildenblat

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 351 KB

english, 1993

9

Charge trapping and dielectric breakdown in MOS devices in 77–400 K temperature range

C.-L. Huang, S.A. Grot, G.Sh. Gildenblat, V. Bolkhovsky

Journal:

Solid-State Electronics

Year:

1989

Language:

english

File:

PDF, 543 KB

english, 1989

10

A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation

Arora, N.D., Gildenblat, G.Sh.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 599 KB

english, 1987

11

Mo/Al metallization for VLSI applications

Cohen, S.S., Gildenblat, G.Sh.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1.77 MB

english, 1987

12

Space-charge-limited currents in materials with nonlinear velocity-field relationships

Gildenblat, G.Sh., Rao, A.R., Cohen, S.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 799 KB

english, 1987

13

Electrical properties of selectively grown homoepitaxial diamond films

Grot, S. A., Hatfield, C. W., Gildenblat, G. Sh., Badzian, A. R., Badzian, T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 656 KB

english, 1991

14

The barrier height of Schottky diodes with a chemical-vapor-deposited diamond base

Hicks, M. C., Wronski, C. R., Grot, S. A., Gildenblat, G. Sh., Badzian, A. R., Badzian, T., Messier, R.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 553 KB

english, 1989

15

Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films

Gildenblat, G. Sh., Grot, S. A., Wronski, C. R., Badzian, A. R., Badzian, T., Messier, R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 468 KB

english, 1988

16

Pulsed space-charge-limited currents in GaAs

Gildenblat, G.Sh., Rao, A.R.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 220 KB

english, 1987

17

Current-voltage characteristic of pulsed space-charge-limited currents in GaAs

Gildenblat, Gennady Sh., Rao, Ashwin R.

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 529 KB

english, 1987

18

Electron trapping in thin gate insulators prepared using a two-step silicon oxidation procedure

Jackson, Daniel B., Bolkhovsky, Vladimir, Gildenblat, Gennady Sh.

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 755 KB

english, 1987

19

Oxygen based electron cyclotron resonance etching of semiconducting homoepitaxial diamond films

Grot, S. A., Ditizio, R. A., Gildenblat, G. Sh., Badzian, A. R., Fonash, S. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 596 KB

english, 1992

20

On the frequency-dependent capacitance of the nitride-oxide-nitride capacitor

Cohen, S.S., Gildenblat, G.Sh.

Journal:

IEEE Electron Device Letters

Year:

1994

Language:

english

File:

PDF, 230 KB

english, 1994

21

Rectification and internal photoemission in metal/CVD diamond and metal/CVD diamond/silicon structures

Grot, S. A., Lee, S., Gildenblat, G.Sh., Hatfield, C. W., Wronski, C. R., Badzian, A. R., Badzian, T., Messier, R.

Journal:

Journal of Materials Research

Year:

1990

Language:

english

File:

PDF, 491 KB

english, 1990

22

Analytical current-voltage characteristics of space-charge-limited currents for a non-linear velocity-field relationship

GILDENBLAT, G. Sh., COHEN, S. S.

Journal:

International Journal of Electronics

Year:

1987

Language:

english

File:

PDF, 124 KB

english, 1987

23

Electronic Device Fabrication Using Electron Cyclotron Resonance Etching of Boron Doped Homoepitaxial Diamond Films

Grot, S.A., Ditizio, R.A., Gildenblat, G.SH., Badzian, A.R., Fonash, S.J.

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 1.14 MB

english, 1992

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